Download A Brief History of Tomorrow: How The Experts Usually Screw by Jonathan Margolis PDF

By Jonathan Margolis

A desirable examine the longer term, as you've by no means obvious it.

Ten years from now, can we have a tiny computer surgically inserted in an earlobe, able to connecting to cell strains and the web? Fifty years from now, will atomic-sized robots substitute surgeons? 100 years from now, rather than taking the bus, can we easily teleport to paintings? all of it may possibly sound like most unlikely technological know-how fiction, yet recently, so did strolling at the moon. Journalist Jonathan Margolis interviews best thinkers in such fields as genetics, drugs, neurobiology, quantum physics, robotics, laptop technology, and house shuttle to discover the place we're going, and what it is going to appear like while - and if - we get there.

Beginning with famously unsuitable earlier visions of the long run - between them H.G. Wells, George Orwell, Arthur C. Clarke, Stephen Hawking, and invoice Gates - Margolis examines the various unusual and tempting futures that can lie in shop for us. Politics, society, faith, and paintings are all destined for nice alterations. What may perhaps they be? How will they arrive approximately? Thought-provoking, a laugh, and completely unique, a short historical past of the next day is a deliciously compelling examine whatever all of us spend loads of time considering: the long run.

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Additional info for A Brief History of Tomorrow: How The Experts Usually Screw Up (Future Forecasting)

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16). This circuit model 38 3 Predictive Technology Model of Enhanced CMOS Devices consists of two fully depleted SOI devices for the front and back transistors, respectively. , SPICE) [36]. 16 illustrates the detailed schematics of this equivalent circuit model. Two single gate transistors are used to capture the current conduction controlled by the front and back gate in a FinFET transistor. Each sub-transistor has its own definitions of gate voltage (VG), Vth, and Tox. Their sources and drains are electrically connected to form a four-node circuit.

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14. Z. , “High performance and low power transistors integrated in 65 nm bulk CMOS technology,” in IEDM Tech. , 2004, pp. 661–664. 15. C. C. , “A 90-nm CMOS device technology with high-speed, general-purpose, and low-leakage transistors for system on chip applications,” IEDM Tech. , pp. 65–68, 2002. 16. V. , “High speed 45 nm gate length CMOSFETs integrated into a 90 nm bulk technology incorporating strain engineering,” IEDM Tech. , pp. 77–80, 2003. 17. -F. , “High performance 50 nm CMOS devices for microprocessor and embedded processor core applications,” IEDM Tech.

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