By Slava V. Rotkin, Shekhar Subramoney
The e-book describes the cutting-edge in primary, utilized and gadget physics of nanotubes, together with fabrication, manipulation and characterization for machine functions; optics of nanotubes; shipping and electromechanical units and basics of idea for purposes. this data is necessary to the sphere of nanoscience for the reason that nanotubes have the capability to develop into a really major digital fabric for many years to return. The e-book will gain all all readers drawn to the appliance of nanotubes, both of their theoretical foundations or in newly built characterization instruments that could permit useful equipment fabrication.
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Additional resources for Applied Physics of Carbon Nanotubes: Fundamentals of Theory, Optics and Transport Devices
The same holds for the overlap matrix elements between the two (A and B) massless subbands (crossing at the Fermi level). A common approximation of solid state theory is that the spatial variation of a (long–range) external potential is small at the scale of a unit cell (eﬀective mass theorem). The matrix element of the potential is therefore a product of the unit cell overlap integral and the Fourier component of the potential: ψ|U |ψ = ϕ|ϕ Uq . 39) It is evident that this approximation leads to zero scattering (and also mixing, see below) between two closest subbands of the armchair tube as ϕ|ϕ ≡ 0.
53 eV, both the conduction band bottom and the valence band top shift away from the original Fermi point k = 0 and the gap closes. At ﬁelds larger than the critical ﬁeld the gap opens again. The critical ﬁeld strength Ec is inversely proportional to R2 , as in the case of a quasi–metallic nanotube. We note that for two diﬀerent types of semiconductor SWNTs (mentioned in the Introduction) the weak ﬁeld regime is diﬀerent. 7 V/˚ A. In contrast, the gap of a [19,0] SWNT will monotonically decrease with the ﬁeld .
2 eV from top to bottom) is presented (see Color Plates, p. 2 eV (from top to bottom). For other families at lower temperatures T =77 K and 4 K this eﬀect is even sharper. 5 Results and Discussion Next we discuss the OFF/ON ratio of our proposed METFET and show that the theoretical limit for a speciﬁc design of SWNT METFET’s can be as small as 10−6 . 11 shows the room temperature (300 K) ballistic current through a METFET as a function of the gap, Eg (which is proportional to the gate voltage).