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By S. W. S. McKeever
McKeever provides us a finished survey of thermoluminescence, an immense, flexible, and widely-used experimental method. Bringing jointly formerly remoted really good methods, he stresses the significance of the forged nation elements of the phenomenon and hyperlinks those to functions in courting, dosimetry, and geology. The e-book includes chapters on research and designated houses, on instrumentation, and at the number of disorder reaction--using the alkali halides and SiO2 as examples--that can ensue inside a fabric to yield thermoluminescence. 3 chapters pertaining to functions speak about the positive aspects of the forged nation reactions to provide an explanation for many of the homes saw in perform.
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A. P. van Exter, A. P. Woerdman, "Numerical study of the effect of saturation on the linewidth of a semiconductor laser," submitted to IEEE J. Quantum Electron. 11. K. Petermann, "Laser diode modulation and noise", Kluwer Academic Publishers (Dordrecht, 1988). 34 12. E. Siegman, "Lasers," University Science Books (Mill Valley, 1986). 13. H. Henry, "Theory of the linewidth of semiconductor lasers," IEEE J. Quantum Electron. QE-18, 259-264 (1982). 14. A. Hamel, M. P. A. Acket, "Diagnostics of asymmetrically coated semiconductor lasers," accepted for publication in IEEE Photon.
Semicond. 4, 237 (1960); In the context of Optics see, S. John, Phys. Rev. Lelt. 58,2486 (1987). 8. D. E. Khmelnitsky, Physica 126B, 235 (1984). 9. G. Bergmann, Physica 126B, 229 (1984). 10. P. W. Wolf and G. Marset, Phys. Rev. Lett. 55,2696 (1985). 11. M. P. Van Albada and Ad. Lagendijk, Phys. Rev. Lett. 55,2692 (1985). 12. G. H. Watson, P. A. Fleury and S. L. McHall, Phys. Rev. Lett. 5 (1987). 13. See, for example, R. Merlin in Ref. 1; M. Kohmoto, B. Sutherland and C. Tang, Phys. Rev. B35, 1020 (1987); M.
It arises from the fact that saturation leads to a redistribution of the intensity over the cavity and thus slightly affects the outcoupling efficiency. The additional factors appearing in Eq. (8) can be measured (see section 3), however with insufficient accuracy if one wants to deduce a value of K from a measurement of Dv. Our strategy has therefore been to compare the linewidths of two semiconductor lasers grown on the same wafer; in this way the (hopefully identical) device-dependent factors T/opt, nsp and Cl!